型号 SP8M4FU6TB
厂商 Rohm Semiconductor
描述 MOSFET N/P-CH 30V 9A/7A 8SOIC
SP8M4FU6TB PDF
代理商 SP8M4FU6TB
标准包装 2,500
FET 型 N 和 P 沟道
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 9A,7A
开态Rds(最大)@ Id, Vgs @ 25° C 18 毫欧 @ 9A,10V
Id 时的 Vgs(th)(最大) 2.5V @ 1mA
闸电荷(Qg) @ Vgs 21nC @ 5V
输入电容 (Ciss) @ Vds 1190pF @ 10V
功率 - 最大 2W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 带卷 (TR)
同类型PDF
SP8M51TB1 Rohm Semiconductor MOSFET N/P-CH 100V SOP8
SP8M51TB1 Rohm Semiconductor MOSFET N/P-CH 100V SOP8
SP8M51TB1 Rohm Semiconductor MOSFET N/P-CH 100V SOP8
SP8M5FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 6A/7A 8SOIC
SP8M5TB Rohm Semiconductor MOSFET N+P 30V 6A 8-SOIC
SP8M5TB Rohm Semiconductor MOSFET N+P 30V 6A 8-SOIC
SP8M5TB Rohm Semiconductor MOSFET N+P 30V 6A 8-SOIC
SP8M6FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 5A/3.5A 8SOIC
SP8M6TB Rohm Semiconductor MOSFET N+P 30V 3.5A 8-SOIC
SP8M6TB Rohm Semiconductor MOSFET N+P 30V 3.5A 8-SOIC
SP8M6TB Rohm Semiconductor MOSFET N+P 30V 3.5A 8-SOIC
SP8M7FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 5A/7A 8SOIC
SP8M7TB Rohm Semiconductor MOSFET N+P 30V 5A 8-SOIC
SP8M7TB Rohm Semiconductor MOSFET N+P 30V 5A 8-SOIC
SP8M7TB Rohm Semiconductor MOSFET N+P 30V 5A 8-SOIC
SP8M8FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 6A/4.5A 8SOIC
SP8M8TB Rohm Semiconductor MOSFET N+P 30V 6A/4.5A 8-SOIC
SP8M8TB Rohm Semiconductor MOSFET N+P 30V 6A/4.5A 8-SOIC
SP8M8TB Rohm Semiconductor MOSFET N+P 30V 6A/4.5A 8-SOIC
SP8M9FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 9A/5A 8SOIC